Multifunctional Electronics Enabled by 2D Materials: From Scalable Synthesis to Device-Level Characterization and Challenges

Abstract

Two-dimensional (2D) materials like graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and MXenes have gained attention as promising materials to develop multifunctional electronics because of their outstanding electrical, optical, and thermal, and mechanical properties. They have high surface-to-volume ratio and atomically thin structure with tunable bandgaps which make them ideal candidates to use in flexible, wearable, transparent, and high-performance electronic systems. This paper gives a detailed overview of current knowledge of scalable synthesis approaches to graphene, such as chemical vapor deposition, liquid-phase exfoliation and bottom-up approaches, as well as state-of-the-art characterization methods that are essential to the study of the structural relationship between property. Moreover, methods of incorporating 2D materials in different device structures including field-effect based transistors, photo-detection devices, memory units and neuromorphic model are also discussed critically. Important issues of uniformity control, contact resistance, interface stability and CMOS compatibility are identified and explained. Lastly, we conclude with future areas of research, such as the design of materials with the assistance of artificial intelligence, large-area production, and the engineering of 2D heterostructures, which will be necessary before 2D materials-based multifunctional electronics can be achieved on a large scale.